Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications
نویسندگان
چکیده
In this review paper, the performance characteristics of Gate-All-Around (GAA) double nanosheet (NS) MOSFETs are described over a broad temperature range, from 78 K to 473 (200 oC). Emphasis is on analog operation, showing good potential. Besides transistor length, impact metal gate Effective Work Function and vertical distance between nanosheets has been studied. Among others, clear Zero Temperature Coefficient (ZTC) voltage observed that can be modeled by considering shift with threshold maximum transconductance. A trade-off noticed efficiency unit gain frequency, whereby optimal operation point occurs in strong inversion regime. The feasibility designing simple circuits also demonstrated. Finally, detailed investigation low-frequency noise behavior yields values for flicker Power Spectral Density comparison other technology nodes.
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ژورنال
عنوان ژورنال: JICS. Journal of integrated circuits and systems
سال: 2022
ISSN: ['1807-1953', '1872-0234']
DOI: https://doi.org/10.29292/jics.v17i2.617